DocumentCode :
1213513
Title :
Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors
Author :
Morandi, C. ; Spadini, G.
Author_Institution :
Universit¿¿ di Bologna, Facolt¿¿ di Ingegneria, Istituto di Elettronica, Bologna, Italy
Volume :
2
Issue :
3
fYear :
1978
fDate :
5/1/1978 12:00:00 AM
Firstpage :
69
Lastpage :
74
Abstract :
Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.
Keywords :
carrier lifetime; metal-insulator-semiconductor structures; minority carriers; MOS capacitors; active defect; lifetime measurement techniques; minority carriers;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed.1978.0034
Filename :
4807583
Link To Document :
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