• DocumentCode
    1213612
  • Title

    D.C. characteristics of si3n4 passivated m-n-p+ punch-through diodes

  • Author

    Stoev, I. ; Freyer, J.

  • Author_Institution
    Technische Univeristÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    2
  • Issue
    4
  • fYear
    1978
  • fDate
    7/1/1978 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    The paper describes the technology of a passivating Si3N4 layer on the mesa surface of punchthrough diodes. The influence of the free mesa surface on the d.c. performance is given for different gases. Stable I/V characteristics of punch-through diodes can be obtained by annealing in a dry N2 atmosphere before Si3N4 passivation.
  • Keywords
    annealing; passivation; semiconductor diodes; silicon compounds; DC characteristics; Si3N4 passivated m-n-p+ punch through diodes; device stability; dry N2 atmosphere annealing;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed:19780044
  • Filename
    4807594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213612