DocumentCode :
1213698
Title :
Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance
Author :
Centurioni, Emanuele ; Iencinella, Daniele
Author_Institution :
CNR-IMM Sezione di Bologna, Italy
Volume :
24
Issue :
3
fYear :
2003
fDate :
3/1/2003 12:00:00 AM
Firstpage :
177
Lastpage :
179
Abstract :
We investigated with numerical simulations the effects that a transparent conductive oxide front contact (TCO) can have on amorphous silicon/crystalline silicon heterojunction solar cells. We found that, due to the extremely thin emitter layer used in this kind of device, the built-in potential available cannot be merely defined by the difference between the work function of the emitter and the base, but it depends on TCO work function as well. As a consequence, because of the correlation between built-in potential and open circuit voltage, the TCO work function strongly affects the solar cell performance. Simulation results show that a higher work function leads to the best device efficiency.
Keywords :
amorphous semiconductors; elemental semiconductors; interface states; semiconductor device models; semiconductor heterojunctions; silicon; solar cells; surface recombination; work function; ITO; InSnO; Si; amorphous Si/crystalline Si heterojunction solar cell performance; built-in potential; device efficiency; extremely thin emitter layer; front contact work function; numerical simulations; open circuit voltage; solar cell performance; transparent conductive oxide front contact; Amorphous silicon; Circuit simulation; Crystallization; Heterojunctions; Indium tin oxide; Optical films; Photovoltaic cells; Poisson equations; Solar power generation; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.811405
Filename :
1202519
Link To Document :
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