Title :
Fabrication and gain measurements for buried facet optical amplifier
Author :
Lin, M.S. ; Piccirilli, A.B. ; Twu, Y. ; Dutta, N.K.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Reports the fabrication and gain measurements of buried facet optical amplifiers. Chip gain of 25 dB, gain ripple of <1 dB and gain difference of <1 dB for TE and TM-polarised light are observed. The gain is found to decrease rapidly with increasing temperature. This behaviour is explained using a model calculation of the radiative and nonradiative recombination rates in the active region of the amplifier.
Keywords :
gain measurement; optical communication equipment; semiconductor junction lasers; TE polarised light; TM-polarised light; active region; buried facet optical amplifier; chip gain; gain difference; gain measurements; gain ripple; model calculation; nonradiative recombination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890922
