Title :
Theoretical analysis of the Hall effect photovoltaic cell
Author_Institution :
University of Ghent, Laboratory of Electronics, Ghent, Belgium
fDate :
5/1/1979 12:00:00 AM
Abstract :
A theoretical analysis is given describing the Hall effect photovoltaic cell. By illuminating a homogeneous semiconductor, a diffusion of holes and electrons will occur in the direction of decreasing light intensity. Due to the Hall effect, caused by an external magnetic field, holes and electrons will be declined in opposite directions so that a net current will flow through the end contacts. Despite simple arguments indicating that choice of geometry and conductivity could give both high open circuit voltage and efficiency, the detailed analysis indicates that the photoconductivity of the material reduces the internal resistance and leads to low efficiencies.
Keywords :
Hall effect devices; solar cells; Hall effect photovoltaic cell; photoconductivity; solar cells;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0016