Title :
Drive-level capacitance profiling of Cu(In,Ga)Se2 solar cells for different Cu/III ratios
Author :
Zapalac, Geordie ; Demirkan, K. ; Mackie, N.
Author_Institution :
MiaSole Hi-Tech, Santa Clara, CA, USA
Abstract :
We report on drive-level capacitance profiling (DLCP) measurements made on Cu(In,Ga)Se2 solar cells. We observe that the deep level defect density and carrier concentration are correlated, with lower deep level defect densities and lower carrier concentrations associated with higher average Cu/III measured within the first half micron of the surface using Auger electron spectroscopy (AES).
Keywords :
carrier density; copper compounds; deep levels; gallium compounds; indium compounds; solar cells; ternary semiconductors; AES; Auger electron spectroscopy; Cu(InGa)Se2; Cu/III ratios; DLCP; carrier concentration; deep level defect density; drive-level capacitance profiling measurements; solar cells; Capacitance measurement; Frequency measurement; Impedance measurement; Inductance measurement; Phase measurement; Temperature measurement; Voltage measurement; CIGS; carrier concentration; deep level defects; drive-level capacitance profiling;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924956
