A 0.8nV/√Hz CMOS preamplifier for IC-magneto-resistive read elements

Author

Klein, Hans W. ; Robinson, Moises E.

Author_Institution

Hacienda Design Lab., IMP Inc., Pleasanton, CA, USA

Volume

29

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

1589

Lastpage

1595

Abstract

The first CMOS preamplifier IC for magnetoresistive (MR) read elements for use in state-of-the-art tape drives is presented. The circuit´s noise performance of 0.8 nV/√Hz includes noise contributions from both the amplifier and the integrated current source needed to bias the MR elements. It will be shown that a single-ended input architecture is highly attractive for MR preamps because it offers advantages such as lowest noise levels and substantially reduced power and area consumption. Also, a current-mode amplifier (CMA) has been developed to enhance the preamp´s bandwidth, large-signal capability and PSRR. The quad preamp has been implemented in a 1.2 μm CMOS process and measures 4.5×4.24 mm²

Keywords

CMOS analogue integrated circuits; digital magnetic recording; integrated circuit noise; magnetic heads; magnetoresistive devices; preamplifiers; 1.2 micron; CMOS preamplifier; IC-magnetoresistive read elements; PSRR; area consumption; circuit noise performance; current-mode amplifier; integrated current source; large-signal capability; noise contributions; power consumption; preamp bandwidth; single-ended input architecture; tape drives; CMOS integrated circuits; CMOS technology; Integrated circuit noise; Magnetic flux; Magnetic heads; Magnetic materials; Noise level; Preamplifiers; Signal processing; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.340436

Filename

340436