DocumentCode
1215744
Title
Two parameter model for predicting SEU rate [memory devices]
Author
Miroshkin, V.V. ; Tverskoy, M.G.
Author_Institution
Petersburg Nucl. Phys. Inst., Gatchina, Russia
Volume
41
Issue
6
fYear
1994
Firstpage
2085
Lastpage
2092
Abstract
Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.<>
Keywords
errors; integrated circuit modelling; integrated memory circuits; radiation effects; SEU rate prediction; memory devices; single event upsets; threshold energy; two parameter model; volume; Data analysis; Modems; Nuclear physics; Predictive models; Projectiles; Protons; Radiation detectors; Semiconductor memory; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.340546
Filename
340546
Link To Document