• DocumentCode
    1215745
  • Title

    Lucky drift model for non-local impact ionisation incorporating a soft threshold energy

  • Author

    Marsland, J.S.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Liverpool, UK
  • Volume
    150
  • Issue
    2
  • fYear
    2003
  • fDate
    4/18/2003 12:00:00 AM
  • Firstpage
    119
  • Lastpage
    124
  • Abstract
    The lucky drift model of impact ionisation is extended to consider non-local effects. Analytical expressions are developed for the ionisation pathlength probability distribution function (PDF) and good agreement is found with a numerical method based on lucky drift. The lucky drift expressions agree reasonably well with ionisation pathlength PDFs calculated using the Monte Carlo technique at moderately high electric fields (3×107 V m-1) but not at very high fields (108 V m-1) and a reason for this is proposed. Expressions for the non-local ionisation coefficient are found based on the lucky drift model and the expressions are evaluated numerically. Lucky drift is also used to find the probability of injection across a potential barrier and comparison with measurements shows good agreement except at very high electric field values. Reasons for the discrepancy at high fields are proposed.
  • Keywords
    Monte Carlo methods; impact ionisation; photodiodes; semiconductor device models; Monte Carlo technique; high electric fields; ionisation path length; ionisation pathlength probability distribution function; lucky drift model; nonlocal effects; nonlocal impact ionisation; numerical method; potential barrier; soft threshold energy; very high electric field values;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20030383
  • Filename
    1203098