Title :
Characterization of single hard errors (SHE) in 1 M-bit SRAMs from single ion
Author :
Poivey, C. ; Carriere, T. ; Beaucour, J. ; Oldham, T.R.
Author_Institution :
Matra Marconi Space, Velizy Villacoublay, France
Abstract :
A Single Hard Error (SHE) characterization was performed on two types of 1 Mbit SRAMs:MT5C1008 from MICRON and MSM8128 from HITACHI. On both types, test results showed that one single ion is sufficient to create a stuck bit. An orbit SHE rate calculation showed that the probability to have a stuck bit in space on a single 1 Mbit SRAM is rather low.<>
Keywords :
SRAM chips; error statistics; integrated circuit testing; ion beam effects; probability; 1 Mbit; HITACHI; MICRON; MSM8128; MT5C1008; SRAMs; orbit SHE rate calculation; probability; single hard error characterization; single hard errors; single ion; stuck bit; Implants; Laboratories; Milling machines; Orbital calculations; Performance evaluation; Powders; Probability; Random access memory; Testing; Vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
