Title :
Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)
Author :
Faccio, F. ; Bianchi, M. ; Fornasari, M. ; Heijne, E.H.M. ; Jarron, P. ; Rossi, G. ; Borel, G. ; Redolfi, J.
Author_Institution :
CERN, Geneva, Switzerland
Abstract :
The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation (/sup 60/Co). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. P-channel transistors have very low 1/f noise and are less sensitive to irradiation effects.<>
Keywords :
1/f noise; MOSFET; gamma-ray effects; noise measurement; semiconductor device testing; silicon-on-insulator; thin film transistors; white noise; /sup 60/Co; 1.2 /spl mu/m CMOS-SOI technology; 1.2 mum; 1/f noise; 500 Hz to 25 MHz; Thomson HSOI3-HD technology; analog performance; body electrodes; gamma ray effects; generation-recombination contribution; ionizing radiation; irradiation effects; n-channel transistors; noise characterization; noise measurement; noise spectrum; p-channel; threshold voltage shift; total-dose; transconductance degradation; transistors; very low 1/f noise; white noise; Bandwidth; CMOS technology; Degradation; Electrodes; Ionizing radiation; Noise generators; Noise measurement; Threshold voltage; Transconductance; White noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
