Title :
A model for the bipolar-like response of GaAs MESFETs to a high dose rate environment
Author :
Islam, N.E. ; Howard, J.W. ; Fageeha, O. ; Block, R.C. ; Becker, M.
Author_Institution :
Dept. of Nucl. Eng. & Eng. Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the ´neutral base´ is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; radiation effects; semiconductor device models; GaAs; MESFETs; bipolar mechanism; bipolar-like response; device geometry; high dose rate environment; model; neutral base formation; radiation transient; Bipolar transistors; Circuits; Electrons; Gallium arsenide; Geometry; Linear particle accelerator; MESFETs; Material properties; Optical pulses; Physics;
Journal_Title :
Nuclear Science, IEEE Transactions on
