Title :
Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology
Author :
Blanquart, L. ; Delpierre, P. ; Habrard, M.C. ; Mekkaoui, A. ; Mouthuy, T. ; Dentan, M. ; Delagnes, E. ; Fourches, N. ; Rouger, M. ; Truche, R. ; Delevoye, E. ; de Pontcharra, J. ; Blanc, J.P. ; Flament, O. ; Leray, J.L. ; Musseau, O.
Author_Institution :
CPPM, IN2P3, Marseille, France
Abstract :
We present experimental results from a fast charge amplifier and a wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology and irradiated up to 4.5/spl times/10/sup 14/ protons/cm/sup 2/. In parallel, we have irradiated elementary transistors. These components were biased and electrical measurements were done 30 min after beam stop. By evaluating variations of main SPICE parameters, i.e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, we have simulated the wideband analog buffer at different doses. These SPICE simulations are in good agreement with measured circuit degradations. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.<>
Keywords :
BiCMOS analogue integrated circuits; JFET integrated circuits; SPICE; amplifiers; field effect analogue integrated circuits; integrated circuit design; integrated circuit testing; proton effects; semiconductor device testing; silicon-on-insulator; 30 min; BiCMOS-JFET radhard SOI technology; DMILL; PJFET; analog IC design; beam stop; charge amplifier; circuit degradations; current gain variation; electrical measurements; fast charge amplifier; high energy physics; irradiated elementary transistors; main SPICE parameters; pinch-off voltage shift; proton radiation effects; threshold voltage shift; transconductance; wideband analog buffer; Analog integrated circuits; Bipolar transistors; Broadband amplifiers; Circuit simulation; Degradation; Electric variables measurement; Proton radiation effects; SPICE; Threshold voltage; Wideband;
Journal_Title :
Nuclear Science, IEEE Transactions on
