DocumentCode
1217554
Title
The inadequacy of the stuck-at fault model for testing mos lsi circuits: a review of mos failure mechanisms and some implications for computer-aided design and test of mos lsi circuits
Author
Burgess, N. ; Damper, R.I.
Author_Institution
University of Southampton, Department of Electronics & Information Engineering, Southampton, UK
Volume
3
Issue
2
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
30
Lastpage
36
Abstract
The stuck-at fault model is widely used as the basis for automatic test pattern generation in digital circuit testing, for example the D-algorithm. However, there have been growing doubts over the ability of the model to cover faults that occur in MOS LSI circuits. The paper consists of a review of the failure mechanisms that produce faults in MOS LSI circuits, a discussion of the problems that arise when using the stuck-at fault model to test MOS LSI circuits and a set of guidelines for the future development of computer-aided design and test of such circuits.
Keywords
circuit CAD; fault location; field effect integrated circuits; integrated circuit testing; large scale integration; D-algorithm; MOS LSI circuits; automatic test pattern generation; computer aided testing; computer-aided design; digital circuit testing; failure mechanisms; stuck-at fault model; testing;
fLanguage
English
Journal_Title
Software & Microsystems
Publisher
iet
ISSN
0261-3182
Type
jour
DOI
10.1049/sm.1984.0011
Filename
4808122
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