Title :
Equivalent circuit model for an insulated gate bipolar transistor
Author :
Kao, C.H. ; Tseng, C.-C. ; Liang, Y.-C.
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations. The simulation results agree with experimental observations.
Keywords :
circuit simulation; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; IGBT; circuit simulation; doping variation; equivalent circuit model; insulated gate bipolar transistor; multi-MOS model; one-dimensional device simulation model;
Journal_Title :
Electric Power Applications, IEE Proceedings -
DOI :
10.1049/ip-epa:20045151
