Title :
A new wide-band Darlington amplifier
Author :
Armijo, C.T. ; Meyer, Robert G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
8/1/1989 12:00:00 AM
Abstract :
A wideband Darlington amplifier topology which is well suited for maximum-bandwidth, moderate-gain, matched-impedance applications is described. A test circuit using a silicon bipolar monolithic technology with an fT of 9 GHz has been fabricated. Measured results show a 9.3 dB insertion gain and a 3.2 GHz bandwidth for the packaged device
Keywords :
bipolar integrated circuits; impedance matching; wideband amplifiers; 3.2 GHz; 9.3 dB; Si; amplifier topology; bipolar monolithic technology; matched-impedance applications; wide-band Darlington amplifier; Bandwidth; Broadband amplifiers; Circuit testing; Circuit topology; Frequency; Impedance; Laboratories; Military computing; Pulse amplifiers; Resistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
