Title :
Balance sheets of energy and carriers and subcell characteristics in a GaInP/GaAs/Ge tandem solar cell
Author :
Shaoqiang Chen ; Lin Zhu ; Yoshita, Masahiro ; Mochizuki, Takashi ; Changsu Kim ; Akiyama, Hidenori ; Imaizumi, Masayuki ; Kanemitsu, Yoshihiko
Author_Institution :
Inst. for Solid State Phys., Univ. of Tokyo, Kashiwa, Japan
Abstract :
We developed a straightforward and potentially standard method of accessing the balance sheets of energy and carriers as well as respective subcell photovoltaic properties in multi-junction tandem solar cells by measuring absolute electroluminescence quantum yields. This method was indeed applied to a GaInP/GaAs/Ge 3-junction solar cell for satellite use. The 28.7% efficiency derived as a sum of 15.2% (top), 10.7% (mid) and 2.8% (bottom) of 3 subcells via this method shows good agreement with the measured 27.4% efficiency via an I-V curve under 1-sun illumination at AM0. Moreover, the derived balance sheets of energy and carriers revealed respective subcell contributions of radiative and nonradiative recombination losses, junction loss, thermalization loss, and luminescent coupling, to provide detailed diagnosis and valuable feedback to fabrications.
Keywords :
III-V semiconductors; gallium arsenide; germanium; indium compounds; semiconductor junctions; solar cells; solar power satellites; 3-junction solar cell; GaAs; GaInP; Ge; balance sheets; electroluminescence quantum yield; junction loss; luminescent coupling; multijunction tandem solar cells; nonradiative recombination loss; subcell photovoltaic property; thermalization loss; Couplings; Gallium arsenide; Junctions; Loss measurement; Optical losses; Photovoltaic cells; Solar power generation; Aerospace electronics; Design optimization; Electroluminescence; Germanium; III–V semiconductor materials; Solar power generation; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925268