Title :
Low-voltage, 50 Omega , GaAs/AlGaAs travelling-wave modulator with bandwidth exceeding 25 GHz
Author :
Walker, R.G. ; Bennion, 1. ; Carter, A.C.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Abstract :
Travelling-wave, Mach-Zehnder electro-optic modulators to a new design in GaAs/AlGaAs are described. Velocity matching, with 50 Omega impedance and high electro-optic efficiency, is achieved using a capacitively loaded stripline approach. Devices with VGp=4.85 V ( lambda =1152 nm) have 3 dB band widths of 25.5 GHz, while those with shorter electrodes (Vpi =5.7 V) show no roll-off below 26.5 GHz. The bandwidth/voltage ratio for these devices represents the highest yet reported for any class of electro-optic modulator.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; 1152 nm; 25.5 to 26.5 GHz; 50 ohm; GaAs-AlGaAs; Mach-Zehnder electro-optic modulators; bandwidth; bandwidth/voltage ratio; capacitively loaded stripline approach; electro-optic efficiency; travelling-wave modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891041
