Title :
High-power 0.98 mu m GaInAs strained quantum well lasers for Er3+-doped fibre amplifier
Author :
Okayasu, M. ; Takeshita, Takaharu ; Yamada, Makoto ; Horiguchi, M. ; Fukuda, Motohisa ; Kozen, A. ; Oe, Katsutoshi ; Uehara, Satoshi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
High-power GaInAs strained quantum well lasers with an emission wavelength of 0.98 mu m, suitable for Er3+-doped fibre amplifier pumping, have been fabricated. A threshold current of 15 mA and a peak output power as high as 85 mW have been obtained for the ridge waveguide structure with AR/HR facet coating. Highly efficient pumping for the 1.536 mu m signals has been confirmed.
Keywords :
III-V semiconductors; erbium; gallium arsenide; indium compounds; optical communication equipment; optical fibres; optical pumping; semiconductor junction lasers; semiconductor quantum wells; 0.98 micron; 1.536 micron; 15 mA; 85 mW; AR/HR facet coating; GaInAs; SiO 2:Er 3+; emission wavelength; fibre amplifier pumping; peak output power; ridge waveguide structure; strained quantum well lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891050
