Study of recombination process in Cu2ZnSnS4 thin film using two-wavelength excited photoluminescence

Author

Halim, Mohammad Abdul ; Islam, Md Minarul ; Xianjia Luo ; Chong Xu ; Sakurai, Takayasu ; Sakai, Noriyuki ; Kato, Toshihiko ; Sugimoto, Hiroshi ; Tampo, Hitoshi ; Shibata, Hajime ; Niki, Shigeru ; Akimoto, Katsuhiro

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan

fYear

2014

fDate

8-13 June 2014

Firstpage

2334

Lastpage

2337

Abstract

Room-temperature two-wavelength excited photoluminescence (PL) measurements have been performed in the kesterite Cu₂ZnSnS₄(CZTS) and Cu2ZnSn(S,Se)4 (CZTSSe) thin film absorbers. A defect level at 0.8 eV from the valence band and its properties are investigated. Two light sources of 635nm and 1550nm diode lasers, respectively, were used for above bandgap and 0.8eV defect level excitation. The two-wavelength excited PL intensity was stronger than that only above-gap laser irradiation for the CZTS specimen. This phenomenon strongly suggests that the 0.8eV defect level acts as recombination center at room temperature. On the other hand, this defect may act as a trap in lower gap CZTSSe.

Keywords

copper compounds; electron-hole recombination; energy gap; photoluminescence; semiconductor thin films; ternary semiconductors; tin compounds; valence bands; zinc compounds; Cu₂ZnSnS₄; above-gap laser irradiation; bandgap; defect level excitation; diode lasers; kesterite; recombination process; temperature 293 K to 298 K; thin film absorbers; two-wavelength excited photoluminescence; valence band; wavelength 1550 nm; wavelength 635 nm; Laser excitation; Measurement by laser beam; Photonic band gap; Photovoltaic cells; Radiative recombination; Cu2ZnSnS4; kesterite; recombination center; thin film; two-wavelength photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925395

Filename

6925395