Title :
Crystallization behavior of Cu2ZnSn(Sx, Se1−x)4 absorbers processed from sputtered Cu2ZnSnS4 precursors under different selenization conditions
Author :
Temgoua, Solange ; Bodeux, Romain ; Delbos, Sebastien ; Naghavi, Negar
Author_Institution :
IRDEP (Inst. of R&D on Photovoltaic Energy), EDF-Chim. ParisTech, Chatou, France
Abstract :
In this work, we study the crystallization behavior of Cu2ZnSn(SxSe1-x)4 in annealing conditions. Cu-Zn-Sn-S precursors are deposited on glass/Mo substrate by a cosputtering of Cu, ZnS, and SnS. In order to have a better understanding of annealing on the mechanisms of formation of CZTSSe and secondary phases, these precursors are annealed at different temperatures (250°C <;T<;600°C), duration (1 to 60 min) and Se quantity. Efficiencies up to 7% are obtained. Material and diode properties are extracted from chemical, structural and opto-electronic characterization.
Keywords :
annealing; copper compounds; crystallisation; glass; molybdenum; selenium; solar cells; sputtering; tin compounds; zinc compounds; Cu2ZnSn(SxSe1-x)4; absorbers; annealing condition; chemical characterization; cosputtering; crystallization behavior; diode properties; glass-molybdenum substrate; material properties; optoelectronic characterization; secondary phases; selenium quantity; selenization condition; sputtered precursors; structural characterization; time 1 min to 60 min; Annealing; Atmosphere; Crystallization; Films; Photovoltaic cells; X-ray scattering; Cu2ZnSn(S,Se)4; annealing; kesterite;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925417
