Title :
Photo Ionization of Excited Atoms in Gas-Filled Photodiodes: Improved Detectivity with Microsecond-Order Risetime
Author :
Kopeika, N.S. ; Eytan, G.
Author_Institution :
Department of Electrical Engineering Ben-Gurion University of the Negev Beer-Sheva, Israel
fDate :
3/1/1978 12:00:00 AM
Abstract :
Photoionization of excited atoms and resonant absorption effects, which can decrease gas breakdown thresholds by high-power lasers at decreasing wavelengths, also improve low intensity detection sensitivities of gas-filled photodiodes when such devices are biased with dc fields close to gas breakdown. Spectral results indicate very promising potential sensitivity for detecting ultra-violet raidation. D* even in the visible is comparible to that of silicon photodiodes. The "relatively" large dc bias fields employed here improve speed of response significantly. Over moderate (10 -7 - 10-8W) received signal powers response is non-linear with ¿ varying inversely with wavelength.
Keywords :
Atom lasers; Atomic beams; Electric breakdown; Electromagnetic wave absorption; Gas lasers; Ionization; Laser excitation; Photodiodes; Resonance; Silicon;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.1978.4317079