Title :
On the accuracy of a particular implementation of the Shannon-Buehler method [MOSFET mobility models]
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
The accuracy of the constant IDS-V DS version of the Shannon-Buehler method is considered. The variation of the effective mobility with gate voltage and substrate bias results in the difference between the measured and actual channel impurity profiles. General expressions that allow one to compute correction factors using different MOSFET mobility models are derived. General results are illustrated by considering two commonly used mobility models
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor device models; MOSFET mobility models; Shannon-Buehler method; channel impurity profiles; correction factors; effective mobility; gate voltage; substrate bias; Dielectric constant; Dielectrics and electrical insulation; Differential equations; Genetic expression; Intrusion detection; MOSFET circuits; Semiconductor impurities; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
