Title :
Output inductance of an emitter follower
Author_Institution :
TRW Defense and Space Systems Group, Microelectronics Center, Redondo Beach, USA
fDate :
7/1/1979 12:00:00 AM
Abstract :
A small-signal analysis of a simple emitter follower is performed to ascertain its effective output inductance as a function of circuit element values, transistor parameters and signal frequencies. It is shown that the low-frequency value of output inductance is directly proportional to the common emitter shortcircuit gain-bandwidth product. Moreover, the product of this inductance and the bandwidth over which the input port of an emitter follower behaves as a low Q reactive impedance is limited solely by transistor gainbandwidth product and collector junction capacitance
Keywords :
active networks; amplifiers; bipolar transistor circuits; inductors; semiconductor device models; bipolar transistors; circuit element values effect; collector junction capacitance; effective output inductance; emitter follower; low Q reactive impedance; signal frequency effect; small signal analysis; transistor gain bandwidth; transistor gain bandwidth product; transistor parameters effect;
Journal_Title :
Electronic Circuits and Systems, IEE Journal on
DOI :
10.1049/ij-ecs.1979.0029
