Analysis of GaAs/AlGaAs quantum nanodisk solar cell with intermediate band carrier transportation

We have developed an 1-D drift-diffusion model for an intermediate band solar cell (IBSC) based on Scharfetter-Gummel scheme. The effect of the electron transportation in intermediate band is investigated by a rigorous solution to the electron density in IB. Due to the introduction of the electron mobility in intermediate band (IB), the electron density in IB tends to become uniform. Varying the electron mobility in IB causes the change of the potential profile and electron density in IB region. Moreover, the conversion efficiency including the electron mobility in the IB presented here decreases compared to results based on sole generation/recombination process model, which is the conventional method. However, the efficiency can be fully recovered by the light concentration, indicating the importance to enhance the electron density in IB.