Growth of low defect density mc-Si ingots and wafers for PV application

Author

Zhiqiang Zhang ; Yingbin Zhang ; Zhen Xiong ; Hongliang Ye ; Feilin Ping ; Shaoyong Fu ; Zhiqiang Feng ; Verlinden, Pierre J.

Author_Institution

State Key Lab. of PV Sci. & Technol., Trina Solar, Changzhou, China

fYear

2014

fDate

8-13 June 2014

Firstpage

3043

Lastpage

3045

Abstract

An optimized seeded growth of multicrystalline silicon (mc-Si) ingot with modified hot zone and recipe of directional solidification is reported. Low defect density, as well as a higher and more uniform minority carrier lifetime, in the mc-Si ingot were observed with the optimized hot zone and recipe compared to the baseline growth conditions. A comparative study with two groups of solar cells made with the same fabrication process demonstrated an increase in average solar cell conversion efficiency by about 0.3% and in open circuit voltage by about 4 mV in absolute value.

Keywords

elemental semiconductors; ingots; semiconductor growth; silicon; solar cells; solidification; PV application; Si; baseline growth conditions; directional solidification; fabrication process; low defect density mc-silicon ingots; multicrystalline silicon ingot; open circuit voltage; optimized seeded growth; solar cell conversion; voltage 4 mV; wafers; Silicon; Turning; Directional solidification; defect density; multicrystalline ingot; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925577

Filename

6925577