Dynamics and two photon intersubband absorption of photovoltaic quantum structures

Author

Sippel, P. ; Schwarzburg, K. ; Borgwardt, M. ; Elagin, Mikaela ; Heitz, S. ; Semtsiv, Mykhaylo P. ; Masselink, W. Ted ; Hannappel, Thomas ; Eichberger, R.

Author_Institution

Dept. of Solar Fuels, Helmholtz Zentrum Berlin, Berlin, Germany

fYear

2014

fDate

8-13 June 2014

Firstpage

3254

Lastpage

3257

Abstract

Multiple quantum well (InAlAs/InGaAs) based photovoltaic cells and subsystems were grown by molecular beam epitaxy on (001) InP substrates to study the dynamics of the intersubband transitions and the photocurrent behavior with ultrafast and continuous wave (cw) laser spectroscopy, respectively. The surface recombination velocity was determined with photoluminescence and time domain THz spectroscopy by varying the well thickness. Two-photon absorption was observed in a photovoltaic device as an increase in photocurrent from room temperature down to 5 K by illumination of the structures at two different wavelengths.

Keywords

gallium arsenide; indium compounds; molecular beam epitaxial growth; photoconductivity; photoemission; photoluminescence; quantum well devices; solar cells; surface recombination; InAlAs-InGaAs; InP; intersubband transition; molecular beam epitaxy growth; multiple quantum well based photovoltaic cell; photocurrent behavior; photoluminescence; photovoltaic quantum well structure; surface recombination velocity; temperature 293 K to 298 K; time domain THz spectroscopy; two-photon intersubband absorption; ultrafast continuous wave laser spectroscopy; Absorption; Laser excitation; Photovoltaic cells; Radiative recombination; Spectroscopy; III–V semiconductors; charge carrier lifetime; photovoltaic cells; quantum wells; time-resolved spectroscopy; two-photon absorption;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925630

Filename

6925630