DocumentCode :
1223069
Title :
Computer controlled drifting of Si(Li) detectors
Author :
Landis, D.A. ; Wong, Y.K. ; Walton, J.T. ; Goulding, F.S.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Volume :
36
Issue :
1
fYear :
1989
fDate :
2/1/1989 12:00:00 AM
Firstpage :
185
Lastpage :
189
Abstract :
A relatively inexpensive computer-controlled system for performing the drift process used in fabricating Si(Li) detectors is described. The system uses a small computer to monitor the leakage current, applied voltage, and temperature on eight individual drift stations. The associated computer program initializes the drift process, monitors the drift progress, and then terminates the drift when an operator set drift time has elapsed. The improved control of the drift with this system has been well demonstrated in the fabrication of a variety of Si(Li) detectors. A few representative system responses to detector behavior during the drift process are described
Keywords :
computerised control; elemental semiconductors; physics computing; semiconductor counters; silicon; Si:Li detectors; applied voltage; computer-controlled system; drift process; leakage current; semiconductor detector; temperature; Automatic control; Computerized monitoring; Control systems; Detectors; Fabrication; Leakage current; Lithium; Silicon; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.34431
Filename :
34431
Link To Document :
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