Title :
Electrical characteristics and reliability of UV transparent Si3N4 metal-insulator-metal (MIM) capacitors
Author :
Bolam, Ronald J. ; Ramachandran, Vidhya ; Coolbaugh, Doug ; Watson, Kimball M.
Author_Institution :
IBM Microelectron. Div., Essex Junction, VT, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
In this paper, we discuss the electrical characteristics and reliability of UV transparent Si3N4 metal-insulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff/μm2 to 2.8 ff/μm2, respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films extends the limits of maximum operating voltage. Accounting for temperature acceleration and area scaling, the projected lifetimes can be met for a wide range of operating conditions.
Keywords :
MIM devices; capacitors; dielectric thin films; reliability; silicon compounds; transparency; Si3N4; Si3N4 MIM capacitor; UV transparency; area scaling; dielectric film; electrical characteristics; reliability; temperature acceleration; Capacitance measurement; Dielectric measurements; Dielectric substrates; Electric variables; MIM capacitors; MOS capacitors; Metal-insulator structures; Silicon; Voltage; Wiring;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.812148
