• DocumentCode
    1223536
  • Title

    Electrical characteristics and reliability of UV transparent Si3N4 metal-insulator-metal (MIM) capacitors

  • Author

    Bolam, Ronald J. ; Ramachandran, Vidhya ; Coolbaugh, Doug ; Watson, Kimball M.

  • Author_Institution
    IBM Microelectron. Div., Essex Junction, VT, USA
  • Volume
    50
  • Issue
    4
  • fYear
    2003
  • fDate
    4/1/2003 12:00:00 AM
  • Firstpage
    941
  • Lastpage
    944
  • Abstract
    In this paper, we discuss the electrical characteristics and reliability of UV transparent Si3N4 metal-insulator-metal (MIM) capacitors. We examine film thicknesses in the range of 55 to 25 nm with capacitance densities from 1.2 ff/μm2 to 2.8 ff/μm2, respectively, for single MIM capacitors. A new approach for projecting the dielectric reliability of these films extends the limits of maximum operating voltage. Accounting for temperature acceleration and area scaling, the projected lifetimes can be met for a wide range of operating conditions.
  • Keywords
    MIM devices; capacitors; dielectric thin films; reliability; silicon compounds; transparency; Si3N4; Si3N4 MIM capacitor; UV transparency; area scaling; dielectric film; electrical characteristics; reliability; temperature acceleration; Capacitance measurement; Dielectric measurements; Dielectric substrates; Electric variables; MIM capacitors; MOS capacitors; Metal-insulator structures; Silicon; Voltage; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.812148
  • Filename
    1206875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1223536