DocumentCode :
1223571
Title :
CMOS wideband amplifiers using multiple inductive-series peaking technique
Author :
Wu, Chia-Hsin ; Lee, Chih-Hun ; Chen, Wei-Sheng ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
40
Issue :
2
fYear :
2005
Firstpage :
548
Lastpage :
552
Abstract :
This work presents the technique of multiple inductive-series peaking to mitigate the deteriorated parasitic capacitance in CMOS technology. Employing multiple inductive-series peaking technique, a 10-Gb/s optical transimpedance amplifier (TIA) has been implemented in a 0.18-μm CMOS process. The 10-Gb/s optical CMOS TIA, which accommodates a PD capacitor of 250 fF, achieves the gain of 61 dBΩ and 3-dB frequency of 7.2 GHz. The noise measurement shows the average noise current of 8.2 pA/√Hz with power consumption of 70 mW.
Keywords :
CMOS integrated circuits; low-power electronics; optical fibre amplifiers; wideband amplifiers; 0.18 micron; 10 Gbit/s; 7.2 GHz; 70 mW; CMOS integrated circuit; PD capacitor; average noise current; inductive-series peaking; noise measurement; optical transimpedance amplifier; parasitic capacitance; power consumption; wideband amplifier; Broadband amplifiers; CMOS process; CMOS technology; Capacitors; Frequency; Optical amplifiers; Optical noise; Parasitic capacitance; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2004.840979
Filename :
1388646
Link To Document :
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