Title :
A Program-Erasable High-κ Hf0.3N0.2O0.5 MIS Capacitor With Good Retention
Author :
Yang, H.J. ; Chin, Albert ; Chen, W.J. ; Cheng, C.F. ; Huang, W.L. ; Hsieh, I.J. ; McAlister, S.P.
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
We describe a programmable-erasable MIS capacitor with a single high-k Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ~6.6 fF/mum2, low program and erase voltages of +5 and -5 V, respectively, and a large DeltaVfb memory window of 1.5 V. In addition, the 25degC data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
Keywords :
MIS capacitors; HfNO - Interface; capacitance density; data retention; dielectric layer; programmable-erasable MIS capacitor; CMOS technology; Capacitors; Dielectric substrates; Hafnium; MIS devices; Materials science and technology; Nonvolatile memory; Random access memory; Rapid thermal annealing; Voltage; Capacitor; dynamic random access memory (DRAM); erase; high-$kappa$; nonvolatile memory (NVM); program;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.905375
