Title :
A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband Wireless Applications
Author :
Oka, Tohru ; Hasegawa, Masatomo ; Hirata, Michitoshi ; Amano, Yoshihisa ; Ishimaru, Yoshiteru ; Kawamura, Hiroshi ; Sakuno, Keiichi
Author_Institution :
Sharp Corp., Nara
Abstract :
This paper describes technologies of miniaturized high-power low-distortion GaAs HBT power amplifiers with a low-voltage operation for mobile terminals used in 5-6 GHz broadband wireless applications. In conjunction with diode-based linearizing techniques, wideband matching network techniques including trap circuits for second harmonics allow us to obtain a compact broadband power amplifier module with harmonic filtering, achieving the high linear output power at a low supply voltage together with the low distortion and the low second-harmonic spurious outputs in a wide frequency range. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.3 V in a frequency range of 5-6 GHz. Second harmonic spurious outputs below -35 dBc were also attained.
Keywords :
III-V semiconductors; bipolar transistor circuits; gallium arsenide; harmonic distortion; microwave power amplifiers; mobile communication; telecommunication terminals; wideband amplifiers; GaAs HBT power amplifier; bit rate 54 Mbit/s; broadband power amplifier module; broadband wireless communication; diode-based linearizing techniques; frequency 5 GHz to 6 GHz; harmonic filtering; mobile terminals; trap circuits; voltage 3.3 V; wideband matching network techniques; Broadband amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Operational amplifiers; Power amplifiers; Power generation; Power harmonic filters; Power system harmonics; Broadband wireless application; harmonics; heterojunction bipolar transistor (HBT); linear; power amplifier; trap circuit;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.904154
