DocumentCode :
1226103
Title :
Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology
Author :
Gadlage, Matthew J. ; Schrimpf, Ronald D. ; Narasimham, Balaji ; Pellish, Jonathan A. ; Warren, Kevin M. ; Reed, Robert A. ; Weller, Robert A. ; Bhuva, Bharat L. ; Massengill, Lloyd W. ; Zhu, Xiaowei
Author_Institution :
Vanderbilt Univ., Nashville, TN
Volume :
29
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
638
Lastpage :
640
Abstract :
The charge required to store (or potentially disturb) a digital logic signal decreases as feature sizes in advanced devices decrease. As a result, the soft-error rate has become a significant reliability issue for highly scaled technologies. Single-event transients (SETs), or glitches that originate in logic circuits, are one of the most important categories of soft errors. In this letter, SETs produced by heavy ions and alpha particles are measured using a specially designed IC. The first results identifying the conditions under which an alpha particle deposits enough charge to create a SET in a bulk 90-nm CMOS technology are presented.
Keywords :
CMOS logic circuits; alpha-particles; integrated circuit reliability; radiation hardening (electronics); transients; CMOS technology; alpha particle-induced single event transient vulnerability; digital logic signal; single-event transients; size 90 nm; soft-error rate; Alpha particles; CMOS logic circuits; CMOS technology; Circuit testing; Logic circuits; Logic devices; MOSFETs; Pulse circuits; Pulse inverters; Pulse measurements; Alpha particles; IC reliability; radiation effects; single-event upset;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.922314
Filename :
4526765
Link To Document :
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