Title :
Implementation of a closed-loop growth scheme for AlAs-GaAs distributed Bragg reflector (DBR) structures using in situ pyrometric interferometry monitoring
Author :
Liu, X. ; Ranalli, E. ; Sato, D.L. ; Lee, H.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
We have investigated a closed-loop control system for molecular beam epitaxial growth of quarter-wavelength AlAs-GaAs distributed Bragg reflector (DBR) structures using in situ pyrometric interferometry. The quasi-sinusoidal PI data was being treated as an amplitude and phase modulated signal for control of layer thickness. Highly reproducible PI signals were obtained without the need of careful growth rate calibration. This technique can be useful in achieving reproducible growth of DBR structures, including vertical cavity surface emitting lasers.
Keywords :
III-V semiconductors; aluminium compounds; calibration; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; light interferometry; molecular beam epitaxial growth; optical modulation; phase modulation; pyrometers; semiconductor growth; semiconductor lasers; surface emitting lasers; temperature measurement; AlAs-GaAs; AlAs-GaAs DBR structures; DBR structures; amplitude modulated signal; closed-loop control system; closed-loop growth scheme; growth rate calibration; in situ pyrometric interferometry; in situ pyrometric interferometry monitoring; layer thickness; molecular beam epitaxial growth; phase modulated signal; quarter-wavelength AlAs-GaAs distributed Bragg reflector structures; quasi-sinusoidal PI data; reproducible growth; vertical cavity surface emitting lasers; Calibration; Control systems; Distributed Bragg reflectors; Interferometry; Molecular beam epitaxial growth; Monitoring; Phase modulation; Surface treatment; Thickness control; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
