TCAD assessment of dual material gate nanoscale RingFET (DMG-RingFET) for analog and digital applications

In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET has also been presented. Various important analog and digital performance metrics such as drain current (I_ds), transconductance (gm), transconductance generation efficiency (g_m/I_ds), early voltage (V_ea), output voltage of inverter and inverter gain has been discussed in detail. In addition to this investigation of DMG-RingFET as an inverter has been performed to demonstrate the reliability of DMG-RingFET architecture for digital circuit application.