Current-voltage characteristics CNTFET considering non-ballistic conduction: Effect of gate oxide thickness

Carbon nanotube is being considered as a prospective alternative for the existing Silicon technology in present days. The advancement of Silicon technology, at present, has slowed down considerably because of its various material issues and scaling limitations and so, carbon nanotubes have gained the attention of researchers around the world over. In this literature, the effect of gate oxide thickness on the performance of carbon nanotube field effect transistor (CNTFET) with non-ballistic conduction is extensively investigated. It is found in this study that with the increase of the gate oxide thickness, the current output of CNTFET considering non-ballistic conduction deteriorates by a significant amount. In addition to this, the results obtained from this experiment are compared with previously reported CNTFET with ballistic conduction data for a better perception of the non-ballistic conduction effects. Also, the on and off state current ratios have been calculated and plotted in this work to further contrast the ballistic and non-ballistic conduction of CNTFET.