• DocumentCode
    1228487
  • Title

    InP/InGaAs HBTs with n+-InP contacting layers grown by MOMBE using SiBr4

  • Author

    Fresina, M.T. ; Jackson, S.L. ; Stillman, G.E.

  • Author_Institution
    Microelectron. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    30
  • Issue
    25
  • fYear
    1994
  • fDate
    12/8/1994 12:00:00 AM
  • Firstpage
    2177
  • Lastpage
    2178
  • Abstract
    InP/InGaAs heterojunction bipolar transistors (HBTs) with low resistance, nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers have been demonstrated with excellent DC characteristics. A specific contact resistance of 5.42×10-8 Ω·cm2, which, to the best of our knowledge, is the lowest reported for TiPtAu on n-InP, has been measured on InP doped n=6.0×1019 cm-3 using SiBr4. This low contact resistance makes TiPtAu contacts on n-InP viable for InP/InGaAs HBTs
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; ohmic contacts; platinum; semiconductor-metal boundaries; titanium; DC characteristics; HBTs; MOMBE growth; SiBr4; SiBr4 doping source; Ti-Pt-Au-InP-InGaAs; heterojunction bipolar transistors; n+-InP contacting layers; nonalloyed TiPtAu contacts; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941451
  • Filename
    350119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1228487