DocumentCode
1228792
Title
Arbitrary phase shift by selective MOVPE growth and its application to 1.5 μm λ/4 phase-shifted InGaAs/lnGaAsP MQW-DFB-LDs
Author
Shim, Jong-In ; Kitamura, Masayuki
Author_Institution
Dept. of Electron. Eng., Hanyang Univ., Ansan
Volume
30
Issue
25
fYear
1994
fDate
12/8/1994 12:00:00 AM
Firstpage
2130
Lastpage
2131
Abstract
A new method which uses selective MOVPE growth is proposed to introduce arbitrary phase shifts and applied to 1.55 μm MQW-DFB-LDs. Additional phase shifts produced by the differences in the selectively grown waveguide structures are estimated experimentally, and effective λ/4-phase-shifted 1.5 μm InGaAs/InGaAsP MQW-DFB-LDs are realised
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; InGaAs-InGaAsP; MQW-DFB-LDs; arbitrary phase shifts; laser diodes; selective MOVPE growth; selectively grown waveguide structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941477
Filename
350151
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