Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

Author

Su, V.C. ; Kuo, James B. ; Lin, I.S. ; Lin, Guan-Shyan ; Chen, David C. ; Yeh, Chune-Sin ; Tsai, Cheng-Tzung ; Ma, Mike

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

Volume

55

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

1558

Lastpage

1562

Abstract

This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher in the saturation region and show a less steep subthreshold slope for the 40-nm PD device with a smaller S/D length of 0.17 due to the weaker function of the parasitic bipolar device as a result of the larger body-source bandgap-narrowing effect coming from the higher STI-induced mechanical stress.

Keywords

MOS integrated circuits; bipolar integrated circuits; energy gap; nanoelectronics; silicon-on-insulator; 2D simulation results; PD silicon on insulator; STI-induced mechanical-stress-related kink-effect behaviors PD SOI NMOS device; Si; bandgap-narrowing effect; parasitic bipolar device; shallow-trench-isolation; size 40 nm; CMOS technology; Effective mass; Length measurement; MOS devices; Mechanical variables measurement; Silicon compounds; Silicon on insulator technology; Stress measurement; Testing; Thermal stresses; CMOSFET; silicon on insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.922858

Filename

4527070