Title :
Transient ionizing radiation effects in devices and circuits
Author :
Alexander, David R.
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
A review and summary of over 40 years of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented. Emphasis is placed on the relationship of circuit effects to physical mechanisms at the transistor and diode level.
Keywords :
MOSFET; radiation effects; radiation monitoring; 40 y; circuit effects; diode level; microcircuits; nuclear test; photocurrent; transient ionizing radiation effects; Circuits; Collaboration; Diodes; Instruments; Ionizing radiation; Photoconductivity; Radiation effects; Recruitment; Testing; Transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.813136
