DocumentCode :
1229616
Title :
Review of displacement damage effects in silicon devices
Author :
Srour, J.R. ; Marshall, Cheryl J. ; Marshall, Paul W.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Volume :
50
Issue :
3
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
653
Lastpage :
670
Abstract :
This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
Keywords :
annealing; energy loss of particles; radiation effects; radiation hardening (electronics); semiconductor devices; silicon; Si; annealing; displacement damage; displacement damage effects; displacement-damage information sources; energy loss; radiation-induced displacement damage; silicon devices; Annealing; Bibliographies; Conducting materials; Energy loss; History; Radiation effects; Semiconductor materials; Silicon devices; Space technology; Terminology;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.813197
Filename :
1208582
Link To Document :
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