Title :
Measurement of the depth of interaction of an LSO scintillator using a planar process APD
Author :
Gramsch, Ernesto ; Avila, Ricardo E. ; Bui, Peter
Author_Institution :
Phys. Dept., Univ. de Santiago, Chile
fDate :
6/1/2003 12:00:00 AM
Abstract :
The authors have evaluated the performance of an avalanche photodiodes (APD)/lutetium oxyorthosilicate (LSO) module for use in positron emission tomography systems. They have used a recently developed APD detector in combination with a 3 × 3 × 30 mm3 LSO scintillator to measure the depth of interaction of 511 keV photons from a 22Na source. The detectors were built using standard planar technology for silicon devices. Photodiodes with 3 mm diameter active area have been produced by deep boron diffusion, followed by shallow boron and phosphor diffusion. Because the structure has not been optimized yet, the authors only obtained a gain of 6 at 1300 V. A simple noise analysis of the detector characteristics indicate that they are still capable of measuring 511 keV photons with sufficient energy resolution for depth of interaction position measurement from a long LSO scintillator.
Keywords :
avalanche photodiodes; diffusion; lutetium compounds; positron emission tomography; solid scintillation detectors; 1300 V; 3 mm; 30 mm; 511 keV; LSO scintillator; Lu2SiO5; PET; avalanche photodiodes; diffusion; energy resolution; interaction depth; planar process APD; planar technology; positron emission tomography; Avalanche photodiodes; Boron; Detectors; Energy measurement; Gain measurement; Noise measurement; Phosphors; Position measurement; Positron emission tomography; Silicon devices;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.812430