• DocumentCode
    1229945
  • Title

    Measurement of the depth of interaction of an LSO scintillator using a planar process APD

  • Author

    Gramsch, Ernesto ; Avila, Ricardo E. ; Bui, Peter

  • Author_Institution
    Phys. Dept., Univ. de Santiago, Chile
  • Volume
    50
  • Issue
    3
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    307
  • Lastpage
    312
  • Abstract
    The authors have evaluated the performance of an avalanche photodiodes (APD)/lutetium oxyorthosilicate (LSO) module for use in positron emission tomography systems. They have used a recently developed APD detector in combination with a 3 × 3 × 30 mm3 LSO scintillator to measure the depth of interaction of 511 keV photons from a 22Na source. The detectors were built using standard planar technology for silicon devices. Photodiodes with 3 mm diameter active area have been produced by deep boron diffusion, followed by shallow boron and phosphor diffusion. Because the structure has not been optimized yet, the authors only obtained a gain of 6 at 1300 V. A simple noise analysis of the detector characteristics indicate that they are still capable of measuring 511 keV photons with sufficient energy resolution for depth of interaction position measurement from a long LSO scintillator.
  • Keywords
    avalanche photodiodes; diffusion; lutetium compounds; positron emission tomography; solid scintillation detectors; 1300 V; 3 mm; 30 mm; 511 keV; LSO scintillator; Lu2SiO5; PET; avalanche photodiodes; diffusion; energy resolution; interaction depth; planar process APD; planar technology; positron emission tomography; Avalanche photodiodes; Boron; Detectors; Energy measurement; Gain measurement; Noise measurement; Phosphors; Position measurement; Positron emission tomography; Silicon devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.812430
  • Filename
    1208613