DocumentCode :
1230319
Title :
The bipolar spin transistor. A novel solid state device taking its first steps
Author :
Johnson, Mark
Author_Institution :
Naval Res. Lab., USA
Volume :
14
Issue :
1
fYear :
1995
Firstpage :
26
Lastpage :
30
Abstract :
The spin transistor is a trilayer, three terminal device similar in some ways to a semiconductor bipolar transistor. Although the physical principles of operation are different, the language of semiconductor physics is borrowed to facilitate the description. The emitter and collector layers of the spin transistor are ferromagnetic films characterized by a magnetization that lies in the plane of the films and has an externally manipulated direction. The base layer is a nonmagnetic metal, such as gold, copper or silver. One could fabricate an array of elements as a nonvolatile random access memory (NRAM). The magnetization orientation of all the emitter films is initially set by application (and subsequent removal) of a large magnetic field. The magnetization of the collector films is manipulated by sending currents through an over-layed array of write wires
Keywords :
bipolar transistors; random-access storage; NRAM; bipolar spin transistor; collector films; collector layer; copper; currents; emitter films; emitter layer; ferromagnetic films; gold; magnetic field; magnetization; magnetization orientation; nonmagnetic metal; nonvolatile random access memory; semiconductor physics; silver; solid state device; three terminal device; write wires; Bipolar transistors; Copper; Gold; Magnetic films; Magnetization; Nonvolatile memory; Physics; Semiconductor films; Silver; Solid state circuits;
fLanguage :
English
Journal_Title :
Potentials, IEEE
Publisher :
ieee
ISSN :
0278-6648
Type :
jour
DOI :
10.1109/45.350565
Filename :
350565
Link To Document :
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