• DocumentCode
    123171
  • Title

    Statistical process variation analysis of a graphene FET based LC-VCO for WLAN applications

  • Author

    Khan, Muhammad Asad ; Mohanty, S.P. ; Kougianos, E.

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Univ. of North Texas, Denton, TX, USA
  • fYear
    2014
  • fDate
    3-5 March 2014
  • Firstpage
    569
  • Lastpage
    574
  • Abstract
    Graphene which is a single atom layer of carbon film with the interesting properties of high carrier mobility, high carrier concentration, high thermal conductivity, high velocity saturation, and reduced short channel effects, is emerging as a replacement of the ubiquitous silicon. This is particularly true for high-speed analog and radio-frequency electronics due to low Ion/Ioff ratio. In this paper, design exploration of a graphene FET (GFET) based LC-VCO is performed with wireless (WLAN) as the target application. Verilog-A based GFET modeling is performed. The model is used in design simulation, characterization, and sensitivity analysis of a cross-coupled version of an LC-VCO. In order to analyze the effects of nanoscale process variations, statistical process variation analysis of the GFET based LC-VCO is performed for selected figures of merit through exhaustive Monte Carlo simulations. Power dissipation and quality factor are also analyzed and their characteristic data are illustrated to obtain a comprehensive description of the circuit. Frequency and phase noise are observed to be within the nominal design range having standard deviation 0.06 GHz and 7.78 dBc/Hz corresponding to 2.35% and 9.03% of the mean, respectively, for the total statistical variation of the parameters.
  • Keywords
    Monte Carlo methods; Q-factor; field effect transistors; graphene; voltage-controlled oscillators; wireless LAN; GFET; LC-VCO cross-coupled version; Monte Carlo simulation; Verilog-A-based GFET modeling; WLAN application; carbon film atom layer; carrier concentration; carrier mobility; design simulation; graphene FET; high-speed analog electronics; nanoscale process variation; nominal design range; phase noise; power dissipation; quality factor; radiofrequency electronics; reduced short channel effects; sensitivity analysis; standard deviation; statistical process variation analysis; thermal conductivity; total statistical parameter variation; velocity saturation; Graphene; Phase noise; Power dissipation; Q-factor; Voltage-controlled oscillators; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2014 15th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4799-3945-9
  • Type

    conf

  • DOI
    10.1109/ISQED.2014.6783377
  • Filename
    6783377