Title :
Accurate electro-thermal model of avalanching junctions subject to ESD currents
Author :
Codecasa, L. ; Amore, D.D. ; Maffezzoni, P.
Author_Institution :
Dipt. di Elettronica e Informazione, Milano, Italy
fDate :
6/12/2003 12:00:00 AM
Abstract :
A new electro-thermal model of avalanching silicon junctions subject to the abrupt and large currents of electro-static-discharge (ESD) phenomenon is presented. A reliable model of the avalanching junction is the core element for accurate CAD-based analysis of ESD failures.
Keywords :
avalanche breakdown; circuit CAD; electrostatic discharge; integrated circuit design; integrated circuit modelling; CAD-based analysis; ESD currents; abrupt currents; avalanching junctions; core element; electro-static-discharge phenomenon; electro-thermal model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030541
