• DocumentCode
    1232014
  • Title

    Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus

  • Author

    Sealy, B.J. ; Rezazaden, A.A.

  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1077
  • Lastpage
    1079
  • Abstract
    Reports that by using rapid thermal annealing (RTA) and the coimplantation of phosphorus, the out-diffusion of beryllium atoms has been prevented. The authors have observed that the reverse annealing behaviour of the Be-implanted samples has been modified after the coimplantation of phosphorus.
  • Keywords
    III-V semiconductors; annealing; beryllium; gallium arsenide; ion implantation; phosphorus; Be outdiffusion; GaAs:Be; GaAs:Be, P; P coimplantation; RTA; electrical activation; rapid thermal annealing; reverse annealing; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890721
  • Filename
    35117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232014