• DocumentCode
    12336
  • Title

    Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

  • Author

    El Moukhtari, I. ; Pouget, V. ; Darracq, F. ; Larue, C. ; Perdu, P. ; Lewis, David

  • Author_Institution
    IMS Lab., Univ. Bordeaux 1, Talence, France
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2635
  • Lastpage
    2639
  • Abstract
    Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.
  • Keywords
    CMOS integrated circuits; sensitivity; stability; CMOS technology; CMOS test structures; NBTI degradation; SET sensitivity; negative bias temperature instability effect; post-aging SET laser threshold measurements; single event transient sensitivity; size 65 nm; Aging; Inverters; Lasers; Logic gates; MOSFETs; Sensitivity; Threshold voltage; Negative bias temperature instability (NBTI); pulsed laser testing; single event transient (SET);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2231437
  • Filename
    6412754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=12336