Title :
Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz
Author :
Hafez, W. ; Jie-Wei Lai ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency fT of 377 GHz with a simultaneous maximum power gain cutoff frequency fmax of 230 GHz at the current density Jc of 650 kA/cm2. Typical BV/sub CEO/ values exceed 3.7 V.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 0.35 micron; 16 micron; 230 GHz; 3.7 V; 377 GHz; InP-InGaAs; InP-InGaAs-based SHBTs; aggressively scaled epitaxial structure; single heterojunction bipolar transistors; submicron SHBTs; submicron emitter process; Bipolar transistors; Bridge circuits; Current density; Cutoff frequency; Double heterojunction bipolar transistors; Etching; Heterojunction bipolar transistors; Optical device fabrication; Planarization; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812530
