An experimental study of carrier heating on channel noise in deep-submicrometer NMOSFETs via body bias

In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (V_b), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |V_b|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NF_min and R_n with the increase in |V_b| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design