DocumentCode
1234802
Title
Analysis of active pixel sensor readout circuit
Author
Salama, Khaled ; El Gamal, Abbas
Author_Institution
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume
50
Issue
7
fYear
2003
fDate
7/1/2003 12:00:00 AM
Firstpage
941
Lastpage
945
Abstract
This work provides a detailed analysis of active pixel sensor, pixel and column circuit. Surprisingly, we find that shorter readout times can be achieved by reducing the bias current and hence reducing energy consumption. We investigate the effect of nonidealities on the readout operation. We find that when the follower transistor channel-length modulation is taken into consideration, delay is reduced, which implies that shorter length transistors can be used in the pixel. We show that readout time decreases linearly with technology scaling.
Keywords
CMOS image sensors; delays; readout electronics; APS; active pixel sensor readout circuit; bias current reduction; column circuit; delay reduction; energy consumption reduction; follower transistor channel-length modulation; high-speed imaging; nonidealities; readout times; technology scaling; CMOS image sensors; CMOS technology; Capacitors; Circuit analysis; Delay; Digital cameras; Energy consumption; Optical imaging; Optical sensors; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher
ieee
ISSN
1057-7122
Type
jour
DOI
10.1109/TCSI.2003.813977
Filename
1211095
Link To Document