• DocumentCode
    1234802
  • Title

    Analysis of active pixel sensor readout circuit

  • Author

    Salama, Khaled ; El Gamal, Abbas

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • Volume
    50
  • Issue
    7
  • fYear
    2003
  • fDate
    7/1/2003 12:00:00 AM
  • Firstpage
    941
  • Lastpage
    945
  • Abstract
    This work provides a detailed analysis of active pixel sensor, pixel and column circuit. Surprisingly, we find that shorter readout times can be achieved by reducing the bias current and hence reducing energy consumption. We investigate the effect of nonidealities on the readout operation. We find that when the follower transistor channel-length modulation is taken into consideration, delay is reduced, which implies that shorter length transistors can be used in the pixel. We show that readout time decreases linearly with technology scaling.
  • Keywords
    CMOS image sensors; delays; readout electronics; APS; active pixel sensor readout circuit; bias current reduction; column circuit; delay reduction; energy consumption reduction; follower transistor channel-length modulation; high-speed imaging; nonidealities; readout times; technology scaling; CMOS image sensors; CMOS technology; Capacitors; Circuit analysis; Delay; Digital cameras; Energy consumption; Optical imaging; Optical sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1057-7122
  • Type

    jour

  • DOI
    10.1109/TCSI.2003.813977
  • Filename
    1211095